Diamond及びMgO基板上のCu及びNi薄膜の結晶成長と磁気光学Kerr効果

概要

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Ni and Cu thin films of about 100 and 50 nm were deposited on MgO(001), (110), (111), and diamond (001) substrates by using a molecular beam epitaxy (MBE) method. Their growth mechanisms were investigated by in-situ RHEED. We found that Ni films can be grown easily on a diamond (001) substrate where the lattice mismatch between Ni and diamond is very small (1.42%). We found that, despite a large lattice mismatch of 19.5% (16.5%) between Ni (Cu) and MgO, Ni and Cu films can be grown epitaxially on MgO(001), (110), and (111) substrates. Moreover we measured magneto-optical (MO) Kerr ellipticity spectra on the epitaxial Ni films on MgO and diamond substrates. As a result, no difference of MO Kerr spectra were observed on Ni(001), (110), and (111). The epitaxial Ni films with Cu buffer layers show relatively small coercive force (H_c) compared with that of epitaxial Ni films without Cu buffer layers.
社団法人日本磁気学会の論文
2005-06-01