低速育成CZ-Si結晶における転位クラスターの形成過程(<小特集>シリコン結晶成長における酸素輸送と欠陥制御)

概要

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The formation process of a dislocation cluster outside the oxidation induced stacking fault (OSF)-ring region during Czochralski (CZ) silicon crystal growth was investigated using a quenching and in situ annealing technique. Dislocation clusters were determined to be interstitial type from inside-outside contrast analysis of the transmission electron microscope (TEM) image. From the quenching experiment, the clustering temperature of dislocations which were formed by supersaturated self-interstitials and/or small dislocation loops was found to be about 1000℃ during growth. Furthermore, the characteristic axitial distribution of etching pit size was observed in the halted crystal. This could be explained by the change in concentration of supersaturated self-interstitials and the formation of a dislocation cluster due to the enhancement of diffusion of point defects.
日本結晶成長学会の論文
2000-01-28