TLZ(Traveling Liquidus-Zone)法による均一組成In_<0.3>Ga_<0.7>As単結晶育成(<小特集>微小重力環境を利用した結晶成長)

概要

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We have invented a new crystal growth method for growing homogeneous In_<0.3>Ga_<0.7>AS crystals. In this method, a liquidus zone is formed by heating a feed with graded or step solute concentration at relatively low temperature gradient i,e., 10 to 20℃/cm. The liquidus-zone travels spontaneously by diffusion due to concentration gradient of solute in the zone and segregation at the freezing interface. When the sample is translated at the rate of the spontaneous zone traveling rate, the solute concentration and the temperature at the freezing interface are kept constant and long homogeneous mixed crystals can be grown. We, therefore, named the new method the traveling liquidus-zone (abbreviated as TLZ) method. The principle of the TLZ method and some experimental results are described. Merits of the TLZ method in microgravity are also discussed.
日本結晶成長学会の論文
2002-10-05