シリコン単結晶の融液成長におけるドーパント不純物の偏析現象(<小特集> バルク結晶成長の新しいアプローチ)

概要

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The dependence of the effective segregation coefficient (K_e) of phosphorous on the growth rate (R) has been investigated by the Necking Method in the silicon Cz process for <100> and <111> growth orientations. The k_e in the relatively lower R region is explained by the BPS theory, however, the k_e in the higher R region is larger than that expected by the BPS theory. Additionally, the critical growth rate (R*), where the value of the coefficient deviates from the theory, depends on the growing crystal orientation. The R* in the <111> crystal is lower (〜0.5 mm/min) than that in the <100> crystal (〜3.0 mm/min). The following two different segregation models were proposed in order to explain the above phenomena. One is based on the deviati on from local equilibrium at the interface. The other is due to the combination of temperature dependence of physical properties and kinetic undercooling Especially, the latter model can quantitatively explain the experimental results.
日本結晶成長学会の論文
1996-06-25