シリコンの磁場中結晶成長における酸素輸送の計算機シミュレーション

概要

論文の詳細を見る
A series of computer simulation was carried out in order to understand the different kinds of behavior between the transverse MCZ and the axial MCZ on the oxygen contents in Si crystals; oxygen contents in silicon crystals are usually very low in the transverse MCZ growth, but frequently quite high in the axial MCZ growth. It has been shown that the oxygen contents in silicon crystals are mostly affected by melt convection. High oxygen contents in silicon crystals are obtained both by weak melt convection and strong melt convection, and low oxygen contents in silicon crystals are obtained by intermediate melt convection. High oxygen contents in the axial MCZ growth are due to excessive suppression of melt convection. The reasons of the dependence of oxygen contents on melt convection are discussed.
日本結晶成長学会の論文
1988-07-25