集積回路内のダイオード素子を発熱体とする沸騰伝熱の研究

概要

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Characteristics of boiling heat transfer from diode elements in an integrated circuit (IC) chip have been investigated. The package of a TTL IC was removed by acid to expose the IC chip. The temperature of the heated diode element was measured by using its forward voltage-current characteristic. It was shown experimentally that the heat transfer rate is greater than the conventional boiling from wide surfaces, and heating of one element influences the heat transfer rate of its neighboring element . Furthermore, differences of heat transfer coefficient due to the surface structure of the chip were revealed. Numerical analysis on the heat conduction in the substrate was also performed, and it was clarified that the overall heat transfer rate increases with decreasing the size of the heating element due to the fin effect of the substrate.
1989-02-25