微小要素における粒界溝初成の原子シミュレーション

概要

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The failure of microelements such as conductors in an LSI is caused mostly by the atomic-scale defects. In this study, the nucleation process of grain boundary grooving in an aluminum conductor is analyzed in terms of atomic mechanics. The motion of atoms near an intersection between grain boundary and surface near the melting temperature is simulated by molecular dynamics and the formation of grooving can be recognized for low Σ boundaries. The simulation, however, can not be applied to the grooving in a real component because the molecular dynamics can simulate the behavior of atoms in a very short period (about 10^<-9> second). A Monte Carlo method to simulate it in a longer period is proposed focusing on the jumps of atoms along the surface. The formation of grooving at lower temperature is successfully simulated by the method.
一般社団法人日本機械学会の論文
1994-12-25