誘導結合RFプラズマ支援スパッタリング法によるリンドープSi_<0.8>Ge_<0.2>熱電薄膜の作製

概要

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A phosphorus-doped Si_<0.8>Ge_<0.2> thin film of 300nm thickness was deposited by radio-frequency (RF) sputtering with an induction coil. Thermal annealing was carried out to crystallize as-deposited amorphous-like SiGe thin films. The thermoelectric properties of the thin films, such as electrical conductivity, carrier concentration, mobility and Seebeck coefficient, were investigated. After annealing at 1000℃ for 5h, the Si_<0.8>Ge_<0.2> thin films exhibited fine grains of around 30nm and a smooth surface with an RMS of 1.91nm. With increasing annealing time, the crystallization of the films progressed, resulting in a high carrier mobility and a large absolute Seebeck coefficient. The phosphorus-doped Si_<0.8>Ge_<0.2> thin film annealed at 1000℃ for 50h showed a low resistivity of 0.04Ωcm, a large Seebeck coefficient of -0.29mV/K, a Hall mobility of 5.41cm_2/Vs, and a carrier concentration of 2.7×10^<19>cm^<-3> at 100℃. The low resistivity of the Si_<0.8>Ge_<0.2> thin film in this study was achieved by strong doping with RF sputtering using the induction coil and resulted in a relatively large thermoelectric power factor of 1.9×10^<-3>W/K^2m, which is the same as that obtained by CVD.
社団法人日本セラミックス協会の論文
2005-08-01