自己組織膜テンプレート上へのジルコニア薄膜のサイト選択析出とマイクロパターニング(<特集>セラミックスインテグレーション)

概要

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Zirconia thin films were successfully micropatterned on octadecyltrichlorosilane (OTS) -self-assembled monolayers (SAM) in ZrOCl_2 8H_2O-ethanol solution at room temperature. OTS-SAM was modified by UV-ir-radiation through a photomask to change into a SAM template patterned with silanol and octadecyl groups. The films were selectively deposited in the silanol regions through hydration-alcoholysis and condensation reactions. The as-deposited film was amorphous with a complex composition, decomposed into tetragonal-zirconia at 500℃, and further transformed into monoclinic-zirconia at 600℃. The as-deposited film demon-strated a dielectric permittivity of 14 at 100 kHz, but a resistivity of 3.1 × 10^<11> Ωcm and a leakage current density of 9.0 × 10^<-7> Acm^<-2> obtained for a MOS device indicated that the film quality needed to be improved.
2002-05-01