Bi-Te熱電材料の微細構造の生成過程と熱電特性及び結晶粒径と圧縮強度の関係

概要

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Semiconducting ceramics of p- and n-type bismuth telluride fabricated from the milled powders of(Bi_2Te_3)_<0.25>(Sb_2Te_3)_<0.75>+Te 2.0 mass% and Bi_2Te_3)_<0.95>(Bi_2Se_3)_<0.05>+HgBr_2 0.07 mass% with low impurity oxygen having figures of merit were as large as 2.6×10^<-3>K^<-1>(p-type)and 2.0×10^<-3>K^<-1>(n-type)at 25℃, respectively, have been developed by hot press. The figure of merit showed a maximum when the grain size was 5 and 10 μm because thermal conductivity apparently became the lowest possibly due to enhanced phonon scattering at grain boundaries. The compressive strength of p- and n-type obeyed Hall-Petch type which was directly proportional to(-1/2)the power of grain size, and showed 8.8 and 6.1 MPa whose figure of merit was maximum, respectively.
社団法人日本セラミックス協会の論文
1996-02-01