圧電セラミックスの圧電特性及び電界誘起歪に及ぼす添加物の影響

概要

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The effects of impurities on piezoelectric constant and the strain characteristics were investigated for ceramics with the composition of(Pb_<0.95>Sr_<0.05>)(Zr_<0.54>Ti_<0.46>)O_3. The piezoelectric constant d_<31> of samples doped with Nb and W was larger than that of non-doped samples, and d_<31> of samples doped with Fe and Ni was smaller than that of non-doped samples. It was found that the actually found strain(δ)under high DC electric field was larger for donor doping and smaller for acceptor doping. In all samples, the δ values were larger than the calculated strain(δ_<cal>)obtained by multiplying d_<31> by DC electric field. This result suggested that the strain(δ_p)of domain orientation due to electric field exists. The δ_p values of samples doped with donor were larger than that of non-doped samples, and those of samples with acceptor were smaller than that of non-doped samples. We found that δ_p is related to the binding force of domain, and that the binding force of domain is dependent on the internal field of space charge produced by dopants.
社団法人日本セラミックス協会の論文
1996-03-01