RFスパッタリングにより作製したサマリウム・アルミニウム含有シリカ薄膜の永続的スペクトルホールバーニング

概要

論文の詳細を見る
We observed persistent spectral hole burning in the excitation spectra of a Sm and Al codoped SiO_2 thin film at 77 and 180 K. The film was prepared from Sm, Al and SiO_2 by RF co-sputtering at a substrate temperature of 300℃. At 77 K, the width of the hole was 2 cm^<-1> with a depth of 4% of the total intensity, while at 180 K, they were measured at 10 cm^<-1> and 1% of the total intensity. The optical absorption and photoluminescence properties of the deposited films were changed by the use of elemental Sm and Al instead of Sm_2O_3 and Al_2O_3.
社団法人日本セラミックス協会の論文
1999-05-01