セラミックターゲットを用いてRFスパッタリングにより作製したサマリウム含有アルミノシリケート薄膜のフォトルミネッセンス

概要

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Samarium-doped aluminosilicate thin films were prepared by rf magnetron sputtering in both pure argon and in a mixture of argon and hydrogen at the substrate temperatures of 25, 200 and 300℃. A hot-pressed ceramic disk was used as a target with a nominal composition of Sm_2O_3・5Al_2O_3・88SiO_2. X-ray photoelectron spectroscopy revealed that the samarium and aluminum contents in the films deposited in both sputtering gases increased with increasing substrate temperature at the expense of sillcon. The photoluminescence intensity of Sm^<2+> ions increased with increasing substrate temperature and with decreasing sputtering pressure, due to the increase in activated Sm^<2+> ions. Hydrogen gas mixed with argon enhanced the reduction of Sm^<3+> to Sm^<2+> at the substrate temporatures of 25 and 200℃. The sddition of an aluminum chip on the ceramic target during deposition increased the absorbance of the films and the photoluminescence intensity of Sm^<2+>whereas that of aluminum oxide did not. These results are attributed to the shifts in the UV edge of the films.
社団法人日本セラミックス協会の論文
1999-08-01