ジエトキシジメチルシランゾル溶液で浸漬処理したPd/SnO_2センサーのガス検出特性

概要

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Dipping a sintered Pd/SnO_2 sensor in a diethoxydimethylsilane sol solution, followed by calcination at 600℃, resulted in a considerable enhancement of gas sensitivity to H_2 but a marked decrease to CH_4 and C_3H_8. In good accordance with the variations in the gas-sensing properties, catalytic activity of the sensor material markedly decreased for CH_4 and C_3H_8 oxidation but increased for H_2 oxidation. TEM observation and EDX analysis revealed that the fine SnO_2 particles were coated with thin SiO_2 layers 2-3 nm in thickness after dipping. Temperature programmed desorption chromatograms (TPD) of O_2 and H_2O were markedly influenced by the formation of thin SiO_2 layers; that is, the amount of active O^- or O^<2-> species on SnO_2 became considerably small, and the adsorbed species of H_2O changed from surface hydroxyl groups to molecular species hydrogen-bonded on the surface oxygen ions. The mechanism of the H_2 gas sensitivity enhancement was discussed from the viewpoint of the modifications in TPD characteristics.
社団法人日本セラミックス協会の論文
1998-06-01