Si_3N_4結合SiCセラミックスの微構造及び焼結機構の解析

概要

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The sintering mechanism of Si_3N_4-bonded SiC ceramics produced by sintering compacts of powder mixtures of SiC and Si in a nitrogen atmosphere is discussed based on the microstructural analyses by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). SEM observations showed that amorphous whiskers and fine Si_3N_4 grains grew on the SiC particles surfaces at the initial stage of sintering, and that amorphous whiskers disappeared to form fine Si_3N_4 grains when heated to the final sintering temperature of 1350℃. TEM observations showed that Si_3N_4 grains grew epitaxially on the SiC lattice and no foreign elements such as oxygen were detected at the SiC-Si_3N_4 interface, and that grain growth of Si_3N_4 seems to be suppressed by the presence of oxygen.
社団法人日本セラミックス協会の論文
1990-05-01