Electronic Structures and Absorption Spectra of II-VI Compound Strained-Layer Superlattices
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概要
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Electronic structures and absorption spectra for direct valence-band-to-conduction-band transitions in ZnSe-ZnS and ZnTe-ZnSe strained-layer superlattices, which have recently attracted interest for an application to optoelectronic devices, are studied theoretically. The calculations of the electronic states near the band edges are carried out by using the Kronig-Penney model in the Luttinger-Kohn Hamiltonian. The calculated absorption spectra are decomposed into each transition component, examined in connection with the mixing of heavy- and light-hole states in detail, and compared with the experimental results. Overall features of the absorption spectra observed recently by Shen et al. are explained reasonably well. For ZnSe-ZnS, it is predicted that a drastic change in the absorption spectrum may occur by changing the incident-photon polarization, and for ZnTe-ZnSe a similar property will be observed, if samples with a thicker barrier layer are studied.
- 社団法人日本物理学会の論文
- 1994-11-15
著者
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Hasegawa A
Niigata Univ. Niigata
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Hasegawa A
Department Of Applied Bioorganic Chemistry Gifu University
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Hasegawa Akira
College of General Education, Niigata University
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HOHNOKI Satoshi
Graduate School of Science and Technology,Niigata University
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KATAYAMA Shin-ichi
Japan Advanced Institute of Science and Technology
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Hohnoki Satoshi
Graduate School Of Science And Technology Niigata University
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Katayama S
Japan Advanced Inst. Sci. And Technol. Ishikawa
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Hasegawa Akira
College Of Engineering Chiba University
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