Renormalization Group Theory of Metal-Insulator Transition in Doped Silicon
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概要
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Assuming that the scattering of electrons by localized moments is strong, weshow that the effect of Coulomb interaction on the metal-insulator transition isnot important in many-valley semiconductors. We investigate the behavior of theconductivity and the dielectric constant applying renormalization group thcoryto non-interacting electrons, and we show that they behave like o.?n/n. - 1 l' andzg?n/n. -11-" with .s':0.5 near the transition, n being the donor concentration.The relation o.(7.=e'(v/(3n"'1 is derived with v the density of states, andit agrees with the experiments within a factor 1.5.
- 社団法人日本物理学会の論文
- 1984-01-15
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