Theory of Negative Magnetoresistance I. : Application to Heavily Doped Semiconductors
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概要
- 論文の詳細を見る
Theory of negative magnetoresistatace propo:sed recetatly by the author ispresented itc details and is applied to heavily doped semicotaductors. Experimentson n-type GaAs are semi-quantitatively explained:. The theory is extendec'l to thecase of ar?isotropic systems and is applied to Go a.nd St. Quantitative agreementswith experiment are obtained 011 the anisotropy<cf magnetoresistance Ap ita Ge.Square root de)vendence of ,4p out the magtaitude c>f the magtaetic field observed inGe agrees with the prediction of the theory. As for the magnitude of l p in Go andSi, discrepancies betweeua the theory avud experim<:mats are rather large.
- 社団法人日本物理学会の論文
- 1980-08-15
著者
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Kawabata Arisato
Department Of Physics Gakushuin University
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Kawabata Arisato
Department Of Physics Gakusyuin University
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