Electronic States of Si(001) Stepped Surface under Electric Field Parallel to Surface

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概要

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• Electronic states o'F the 2Xl terrace, the unrec,?onstructed S., buckled S.,reconstructed S. and urxreconstructed S., steps under electric fields parallel to theSi(001) stxrface are calculated by the DV-Xa-LCAO method. If an electric field is ap-plied in parallel and perpendicular to dimers, electron transfer between ncigltboringatoms of two dimers is larger ar?d smaller, respectively. l'or both S. and S. steps, electric field induces large el?:ctron transfers between dimers on the higher and lower terraces near tlae step edge. Furthermore, it changes the charge density of valence bondsbetween surface and subsurface atoms near the step edge. For the S.. steps, electricfield applied in the stej>-down (-up) direction ix?duces a large shift of energy levels tothe lower (higlter) energy side. For tlte S. steps, electric field induces a sltift of energylevels in opposite direction to that of the S., steps.

• 社団法人日本物理学会の論文
• 1992-10-15

著者

• Yamaguchi Tomohiko

  Department Of Chemical Systems National Institute Of Materials And Chemical Research (nimc)

• Tsuyoshi Yamaguchi

  Faculty Of Engineering Shizuoka University

• Yamaguchi Tsuyoshi

  Faculty Of Engineering Shizuoka University

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