Electronic States of Si(001) Stepped Surface
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概要
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Electronic states of the unreconstructed S_b, reconstructed S_b, unreconstructed S_a and buckled S_a steps on the Si(001) surface are calculated by the DV-Xα method. The danglingbond levels appear in the middle of the band gap. The charge distribution of dangling-bond levels reproduces the gross feature of the STM images of the S_a and S_b steps. The charge distribution of the step-edge dimer on the upper terrace of the unreconstructed S_a step is a little asymmetric, although the dimer is symmetric. The enhancement of the buckling of dimers is inconsistent with the STM image. The charge distribution of the buckled S_a step where the dimer is tilted by 10 degrees is buckled, but the shape of its contour does not reproduce the STM image.
- 理論物理学刊行会の論文
- 1992-02-25
著者
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Yamaguchi Tsuyoshi
Faculty Of Engineering Shizuoka University
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YAMAGUCHI Tsuyoshi
Faculty of Engineering, Shizuoka University
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