Conductivity Phase Transition with Shift of Valence-Band Edge and with Structural Distortion in Cu_4Sn_<1-x>Ge_xS_4

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X-ray diffraction, electrical resistivity, DSC and XPS investigations were carriedout on Cu.Sn, ..Ge..S. (03,v3l.0). At room temperature, tlte orthorhombic struclure changes to a monoclinic one at a transition concentration of .X'.=0.6 as x increases. This transition also exhibits the expansions in the energy width between thetop of the valence band and the Fermi level and in the lattice parameter B. The transilion has the characteristics of the first-order high (higlt temperature)-to-low (low fernperature) conductivity phase transition as reported on Cu.SuaS.. The transition tem-perature T. linearly increases with x. These feattrres are briefly compared with theelectronic and structural phase transition reported on SnTe ztnd Pb, .Ge..Te.electronic and structural pltase transition, shift of valence band edge, distortivestructural transition, XPS, conductivity phase transition, latent heat of transi-lion, Cu.Sn, ..Ge..S. solid solution
社団法人日本物理学会の論文
1990-09-15