Impurity Effects of Heavy Fermion Semiconductors
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概要
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The effects of doped impurities of heavy fermion semiconductors are studied on the basis of the periodic Anderson model with randomly distributed Kondo holes. The slave boson mean-field theory is applied to treat the strong Coulomb interaction on f-orbitals, while the effect of disorder is analyzed by the coherent potential approximation (CPA). It is shown that the low-temperature behaviors of specific heat and resistivity are strongly affected by a small amount of impurities due to the formation of an impurity band in the hybridization gap. The results are compared with the experimental observation in the doped heavy fermion semiconductor (Ce_<1-X>La_X)_3Bi_4Pt_3.
- 社団法人日本物理学会の論文
- 1995-03-15
著者
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Shiina Ryousuke
Department Of Physics Faculty Of Science Science University Of Tokyo
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Shiina Ryousuke
Department Of Physics Science University Of Tokyo
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Shiina Ryousuke
Department of Materials Science and Technology, Niigata University, Niigata 950-2181, Japan
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