Temperature Dependence of Mobility of Warm Carriers in Germanium and Silicon

概要

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Quadratic deviation of mobility μ due to higher electric fields (E) (μ=μ_0(1-βE^2)) in germanium and silicon has been measured in the temperature range between 150°K and room temperature by a microwave (9.6 kMc) absorption method. To heat the carriers, 0.5μsec. and 1.0μ sec. pulse electric fields were applied and the induced mobility change was determined from the microwave absorption. The measured values of "warm electron coefficient" β is compared with the theories of Stratton and Adawi. It is found that the experimental results for n-type germanium agree with the theory and that no difference between high and low resistivity n-type germanium exists. The large discrepancy between the experimental and the theoretical values in the case of p-type germanium and silicon is considered to be due to the effect of the light holes.
社団法人日本物理学会の論文
1963-12-05