Hall Effect Measurement of Radiation Effect on P-Type Silicon
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概要
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The Ev+0.27 ev center was produced by γ-ray irradiation at room temperature in P type silicon single crystals. The introduction rate was found to be proportional to the density of the acceptor as dopant. It suggests that this center might be dopant-vacancy complex as in the case of E center in N type materials. It was revealed out that this radiation-induced level is closely related to the dislocation density in both formation and annealing behaviors. At the same time, oxygen concentration reduces the introduction rate of the Ev+0.27 eV center and influences its annealing behaviors, which is similar to the case of E center.
- 社団法人応用物理学会の論文
- 1965-10-15
著者
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INUISHI Yoshio
Faculty of Engineering, Osaka University
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Tanaka Toshikatsu
Faculty Of Engineering Osaka University
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Inuishi Yoshio
Faculty Of Engineering Osaka University
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Inuishi Yoshio
Faculty Of Electrical Engineering Osaka University
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