Radiation Damage Of Carrier Life Time in P Type Si

概要

論文の詳細を見る
The annealing of changes in the electrical properties of silicon caused by Co\<60> gamrna irradiation at room temperature has been investigated by isochronal annealing and lifetime techniques. For recombination centers introduced by Co^<60> gamma rays, the recombination energy level position was placed at 0.21 eV and 0.27 eV above the valence band for the p-type pulled and fioating zoned silicon, respectively. The annealing activation energies of the recombination centers were 0.75 eV and 1.4 eV for the p-type pulled and fioating zoned silicon, respectively. In p-type silicon there is a remarkable process of annealing of the recombination centers at about 300℃. The interaction between defects and dislocations were considered from the introduction rates and the annealing characteristics.
社団法人日本物理学会の論文
1965-12-05