Extended Huckel Study of the Localized Centers in Silicon (Selected Topics in Semiconductor Physics<特集>) -- (Impurity and Disordered States)

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概要

• 論文の詳細を見る

• The electronic states of deeply localized centers in silicon are studied on the finite cluster model of Messmer and Watkins in the extended Huckel (EH) theory. Spherical clusters containing up to 47 atoms are considered. Isolated vacancies and substitutional transition metal impurities are treated as imperfections. The calculation shows that the two cases have much similarity. The positions of the localized states depend rather sensitively on the cluster size and the simple EH theory does not seem to reproduce the observed states in the band gap.

• 理論物理学刊行会の論文
• 1975-11-29

著者

• HOSHINO Toshiharu

  Department of General Education, College of Engineering Shizuoka University

• Suzuki Katuhisa

  Department Of Physics Osaka University

• Hoshino Toshiharu

  Department Of Applied Physics Faculty Of Engineering Shizuoka University

• Hoshino Toshiharu

  Department Of Physics Osaka University

• HOSHINO Toshiharu

  Department of Physics, Osaka University

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