The g-Factors of Interacting Electrons in Silicon Inversion Layers

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概要

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• Landau's theory of Fermi liquid is applied to obtain the quasi-particle parameters of the interacting two-dimensional electrons in the surface inversion layers of silicon. The calculated g-factor exhibits a good agreement with the experimental results of Fang and Stiles over a wide range of electron concentration and supports on a firmer ground Janak's original suggestion that the deviation of the g-factor from the bulk value is caused by the exchange interaction among surface electrons. Similar effects on the effective mass are briefly discussed.

• 社団法人日本物理学会の論文
• 1973-11-05

著者

• Suzuki Katuhisa

  Department Of Physics Osaka University

• KAWAMOTO Yoshifumi

  Department of Physics, Osaka University

• Kawamoto Yoshifumi

  Department Of Physics Osaka University:(present Address) Central Laboratory Hitachi Ltd.

関連論文

• Extended Huckel Study of the Localized Centers in Silicon (Selected Topics in Semiconductor Physics) -- (Impurity and Disordered States)
• Localized Orbital Approach to Electronic Structure of Covalent Semiconductors. II. : The Impurity States in Silicon
• Ground State of Ga and Zn Impurities in Si
• Origin of the Linear and Nonlinear Piezoresistance Effects in p-Type Silicon
• The g-Factors of Interacting Electrons in Silicon Inversion Layers
• Localized Orbital Approach to Electronic Structure of Covalent Semiconductors. I. Energy Bands of Diamond-Type Crystals

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