Full-Potential KKR Calculations for Point Defect Energies in Metals, based on the Generalized-Gradient Approximation: II. Impurity-Impurity Interaction Energies and Phase Diagrams
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概要
- 論文の詳細を見る
- Japan Institute of Metalsの論文
- 2001-11-20
著者
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HOSHINO Toshiharu
Department of General Education, College of Engineering Shizuoka University
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Sawada Hideaki
Advanced Technology Research Laboratories Nippon Steel Corporation
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ASATO Mitsuhiro
Graduate School of Electronic Science and Technology, Shizuoka University
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MIZUNO Toshiya
Department of Applied Physics, Faculty of Engineering, Shizuoka University
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Mizuno Toshiya
Department Of Applied Physics Faculty Of Engineering Shizuoka University
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Asato M
Tokyo Metropolitan Coll. Technol. Tokyo Jpn
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Hoshino Toshiharu
Department Of Applied Physics Faculty Of Engineering Shizuoka University
関連論文
- Hyperfine Interactions for Impurities in Semiconductors
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- Interaction between Substitutional and Interstitial Elements in α iron Studied by First-principles Calculation
- Extended Huckel Study of the Localized Centers in Silicon (Selected Topics in Semiconductor Physics) -- (Impurity and Disordered States)
- Localized Orbital Approach to Electronic Structure of Covalent Semiconductors. II. : The Impurity States in Silicon
- Full-Potential KKR Calculations for Point Defect Energies in Metals, based on the Generalized-Gradient Approximation: I. Vacancy Formation Energies in fcc and bcc Metals
- On the Electronic Structure of the Polar Surface of Compound Crystals
- Localized Orbital Approach to Electronic Structure of Covalent Semiconductors. I. Energy Bands of Diamond-Type Crystals