Localized Orbital Approach to Electronic Structure of Covalent Semiconductors. II. : The Impurity States in Silicon
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概要
- 論文の詳細を見る
The impurity states in Si are investigated theoretically on the basis of a pre-viously proposed formalism, which ern'phasizes the local environment aroundthe impurity center. The impurity potential is made self-consistent in a finiteregion surrounding the impurity atom. The difference of substitutional Ga(shallow) and Zn (deep) impurities is discussed from a chemical viewpoint basedon atomic properties. The electronic structures of interstitial 3d transition metalimpurities Cr, Mn and Fe are calculated for the first time. The obtained resultcan be interpreted in terms of the difference in chemical bonding between thesubstitutional and interstitial cases.
- 社団法人日本物理学会の論文
- 1980-06-15
著者
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Suzuki Katuhisa
Department Of Physics Osaka University
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HOSONO Toshiharu
Department of Physics,Osaka University
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Hosono Toshiharu
Department Of Physics Osaka University:institute For Molecular Science
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Hoshino Toshiharu
Department Of Applied Physics Faculty Of Engineering Shizuoka University
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- Localized Orbital Approach to Electronic Structure of Covalent Semiconductors. II. : The Impurity States in Silicon
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