Ground State of Ga and Zn Impurities in Si

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概要

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• The nature of binding of Ga and Zn impurities in St is explored on the basisof a chemical pseudopotential. The charge distributions around the impuritiesare calculated self-consistently and the relation between atomic properties andthe mechanism giving rise to shallow and deep levels is elucidated.

• 社団法人日本物理学会の論文
• 1979-01-15

著者

• Suzuki Katuhisa

  Department Of Physics Osaka University

• HOSHONO Toshiharu

  Department of Physics,Osaka University

• Hoshono Toshiharu

  Department Of Physics Osaka University

関連論文

• Extended Huckel Study of the Localized Centers in Silicon (Selected Topics in Semiconductor Physics) -- (Impurity and Disordered States)
• Localized Orbital Approach to Electronic Structure of Covalent Semiconductors. II. : The Impurity States in Silicon
• Ground State of Ga and Zn Impurities in Si
• Origin of the Linear and Nonlinear Piezoresistance Effects in p-Type Silicon
• The g-Factors of Interacting Electrons in Silicon Inversion Layers
• Localized Orbital Approach to Electronic Structure of Covalent Semiconductors. I. Energy Bands of Diamond-Type Crystals

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