HOSHINO Toshiharu | Department of General Education, College of Engineering Shizuoka University
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概要
- Hoshino Toshiharuの詳細を見る
- 同名の論文著者
- Department of General Education, College of Engineering Shizuoka Universityの論文著者
関連著者
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HOSHINO Toshiharu
Department of General Education, College of Engineering Shizuoka University
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Hoshino Toshiharu
Department Of Applied Physics Faculty Of Engineering Shizuoka University
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ASATO Mitsuhiro
Graduate School of Electronic Science and Technology, Shizuoka University
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MIZUNO Toshiya
Department of Applied Physics, Faculty of Engineering, Shizuoka University
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Mizuno Toshiya
Department Of Applied Physics Faculty Of Engineering Shizuoka University
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Asato M
Tokyo Metropolitan Coll. Technol. Tokyo Jpn
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HOSHINO Toshiharu
Department of Physics, Osaka University
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ASADA Toshio
Department of Polymer Chemistry, Waseda University
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Asada T
Shizuoka Univ. Hamamatsu
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Asada Toshio
Department Of General Education College Of Engineering Shizuoka University
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Hamada Noriaki
Nec Fundamental Research Laboratory
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TERAKURA Kiyoyuki
Institute for Solid State Physics, University of Tokyo
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KATAYAMA-YOSHID Hiroshi
Department of Physics, Tohoku University
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Terakura Kiyoyuki
Institute For Solid State Physics University Of Tokyo
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Terakura Kiyoyuki
Institute For Solid State Physics The University Of Tokyo
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Terakura K
Tokyo Inst. Of Tech. Yokohama
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Sawada Hideaki
Advanced Technology Research Laboratories Nippon Steel Corporation
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Suzuki Katuhisa
Department Of Physics Osaka University
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Fukushima Hiroshi
Applied Physics and Chemistry, Faculty of Engineering, Hiroshima University
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Hoshino T
Department Of General Education College Of Engineering Shizuoka University
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Hoshino Toshiharu
Department Of Physics Osaka University
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Katayama-yoshid Hiroshi
Department Of Physics Tohoku University
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Hamada Noriaki
Nec Fundamental Research Laboratories
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Fukushima Hiroshi
Applied Material Physics Mechnical System Engineering Hiroshima University
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ASADA Toshio
Department of General Education, College of Engineering Shizuoka University
著作論文
- Hyperfine Interactions for Impurities in Semiconductors
- Full-Potential KKR Calculations for Point Defect Energies in Metals, based on the Generalized-Gradient Approximation: II. Impurity-Impurity Interaction Energies and Phase Diagrams
- Extended Huckel Study of the Localized Centers in Silicon (Selected Topics in Semiconductor Physics) -- (Impurity and Disordered States)
- Full-Potential KKR Calculations for Point Defect Energies in Metals, based on the Generalized-Gradient Approximation: I. Vacancy Formation Energies in fcc and bcc Metals