レーザ CVD による低抵抗配線の高速形成

概要

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Experimental investigations concerning formation of metal interconnects on LSI chips using laser-induced CVD are described. Molybdenum conductors were deposited by pyrolytic decomposition of molybdenum hexacarbonyl using argon ion-laser irradiation. Increasing molybdenum hexacarbonyl pressure, increasing laser power and decreasing writing speed were accompanied by increasing width and thickness of molybdenum conductors. Decomposition efficiency is 20 to 30% which is higher than conventional thermal CVD. Increased width and thickness diminished the resistance of the conductors, but the resistivity was almost independent of the forming conditions and higher than that of bulk molybdenum. Auger electron spectroscopy revealed that the high resistivity of the as-deposited films was due to the presence of carbon and oxygen as impurities. These impurities are removable by laser annealing in a vacuum, whereby the resistivity can be reduced to 10μΩ・cm. These low-resistivity conductors can be applied to fault analysis or repair of not only MOS devices but also linear and bipolar devices.
公益社団法人精密工学会の論文
1992-03-05