LSIのオンチップ配線修正システムにおけるレーザCVDを用いた配線接続装置の開発

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This paper describes the details of an on-chip interconnection system using pyrolytic decom-position of molybdenum hexacarbonyl irradiated with an argon ion laser beam. This system consists of five chambers (CVD, sputter deposition, sputter etching, transportion and load-lock chambers). The system has the ability not only to form molybdenum conductors by laser-induced CVD but also to form chromium film as a barrier by sputter deposition, remove chromium film by sputter etching and reduce resistivity of molybdenum conductors by laser annealing. After the contact holes are formed on LSI chips by the focused ion beam (FIB) system, LSI chips are transported to this system in a vacuum using the container attached to a vacuum pump system and gate valve. The process to make interconnects can be carried out all the way through without exposure to the air. With this system and process, low resistive contacts and low resistive conductors for failure analysis or modification can be obtained and the development time of LSls and electronic systems using LSls can be shortened.
公益社団法人精密工学会の論文
1992-10-05