レーザ CVD で形成した配線接続部の接続抵抗低減

概要

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This paper reports the experimental results of the reduction in contact resistance between aluminum conductors in a semiconductor device and molybdenum conductors deposited by laser-induced CVD. The contact holes are formed by focused ion beam through a passivation layer on the chip surface, and irradiated with an argon ion laser in a molybdenum-hexa-carbonyl atmosphere. The holes can be filled with molybdenum, however, aluminum-molybdenum contact resistance is very high. Even after sufficient removal of natural oxide, the contact resistivity with the molybdenum line formed cross on the aluminum line without a passivation layer is high. The high-resistive contact is caused by the formation of high-resistive alloy diffused aluminum into molybdenum. To prevent alloying, chrominum film was adopted as a barrier layer at the aluminum-molybdenum interface. As a result, the contact resistivity was reduced to 1/100. Automatic positioning using a pattern matching technique and an end-point monitor using a detection in change of the intensity of reflective light can realize low-resistive contact and good outward shape with good reappearance.
公益社団法人精密工学会の論文
1991-08-05