<報文>Si単結晶の転位観察

概要

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Observation of dislocations which occur in silicon crystals grown by the pulling method was made with an infrared image tube and microscope. Although the dislocations present here are too complex for exact analysis, some interesting qualitative observations were obtained as follows. (a) Many of dislocation lines run in the general direction of the growth axis. (b) In the center of the crystals the density of dislocations is relatively low. (c) Propagation by growth of dislocations is initially present in seed. (d) Etch pits on external surface of Cu diffused crystals have special shapes as shown in photograph 9.
東北大学の論文
1961-08-31