RHEED結晶内電子波動場による選択的表面原子位置解析法の研究
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概要
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A new approach on surface structural analysis for selective atoms was attempted by using a combination of reflection high-energy electron diffraction (RHEED) and Auger electron spectroscopy (AES). This approach was applied to an examination of Al atomic sites in Si(111)√3x√3-Al surface. The surface structure was treated as a T_4 site model with a relaxed substrate Si, which was deduced from the RHEED rocking curve analysis with many beam dynamical calculations. Auger electrons emitted from a Si(111)√3x√3-Al surface were measured during RHEED experiment. Enhancements of Al(LMM) Auger intensity were detected upon changing the glancing angle and this behavior was analyzed considering an electron wave field. It was found that the enhancements of Al(LMM) Auger intensity are explained relatively well by the localization of the electron wave field on the Al atomic sites. The result suggests potentiality of the new approach.
- 大同工業大学の論文
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