NbN Josephson Junctions for Single-Flux-Quantum Circuits
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概要
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We describe the fabrication processes and electrical characteristics of two types of NbN junctions. One is a self-shunted NbN/NbNx/AlN/NbN Josephson junction, which is expected to improve the density of integrated circuits; the other is an underdamped NbN/AlNx/NbN tunnel junction with radical-nitride AlNx barriers, which has highly controllable junction characteristics. In the former, the junction characteristics were changed from underdamped to overdamped by varying the thickness of the NbNx layer. Overdamped junctions with a 6-nm-thick NbNx film exhibited a characteristic voltage of Vc =0.8mV and a critical current density of Jc =22A/cm2 at 4.2K. In the junctions with radical-nitride AlNx barriers, Jc could be controlled in the range 0.01-3kA/cm2 by varying the process conditions, and good uniformity of the junction characteristics was obtained.
- 2011-03-01
著者
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Fujimaki Akira
Nagoya Univ. Nagoya Jpn
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AKAIKE Hiroyuki
Nagoya University
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Fujimaki Akira
Nagoya University
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Akaike Hiroyuki
Nagoya Univ. Nagoya‐shi Jpn
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NAITO Naoto
Nagoya University
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NAGAI Yuki
Nagoya University
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