Light Emission from InGaN Quantum Wells Grown on the Facets of Closely Spaced GaN Nano-Pyramids Formed by Nano-Imprinting
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概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2009-12-25
著者
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Edwards Paul
Department Of Physics Supa University Of Strathclyde
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Shields Philip
Department Of Electronic And Electrical Engineering University Of Bath
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LIU Chaowang
Department of Electronic and Electrical Engineering, University of Bath
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SATKA Alexander
International Laser Center and Slovak University of Technology
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JAGADAMMA Lethy
Department of Physics, SUPA, University of Strathclyde
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ALLSOPP Duncan
Department of Electronic and Electrical Engineering, University of Bath
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MARTIN Robert
Department of Physics, SUPA, University of Strathclyde
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KOVAC Jaroslav
International Laser Center and Slovak University of Technology
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UHEREK Frantisek
International Laser Center and Slovak University of Technology
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WANG Wang
Department of Electronic and Electrical Engineering, University of Bath
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Liu Chaowang
Department Of Electronic And Electrical Engineering University Of Bath
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Martin Robert
Department Of Physics Supa University Of Strathclyde
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Martin Robert
Department Of Biological Sciences Murray State University
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Allsopp Duncan
Department Of Electronic And Electrical Engineering University Of Bath
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Jagadamma Lethy
Department Of Physics Supa University Of Strathclyde
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Allsopp Duncan
Department of Electrical and Electronic Engineering, University of Bath, Bath BA2 7AL, U.K.
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Krishnan Lethy
Department of Physics, SUPA, University of Strathclyde, 107 Rottenrow, Glasgow G4 0NG, U.K.
関連論文
- Light Emission from InGaN Quantum Wells Grown on the Facets of Closely Spaced GaN Nano-Pyramids Formed by Nano-Imprinting
- Magneto-Photoluminescence Study of InGaAs/GaAs Quantum Wells and Quantum Dots Grown on (111)B GaAs Substrate
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- Nonlinear perturbations of linear evolution systems
- Excited States of the A and B Free Excitons in CuInSe2
- Photoluminescence of Single GaN/InGaN Nanorod Light Emitting Diode Fabricated on a Wafer Scale
- Optical Properties of GaN Nanorods Containing a Single or Multiple InGaN Quantum Wells
- Investigation of Strain-Relaxation Characteristics of Nitrides Grown on Si(110) by Metalorganic Chemical Vapor Deposition Using X-ray Diffraction
- Composition-Dependent Band Gap and Band-Edge Bowing in AlInN: A Combined Theoretical and Experimental Study
- Photoluminescence of Single GaN/InGaN Nanorod Light Emitting Diode Fabricated on a Wafer Scale
- Optical Properties of GaN Nanorods Containing a Single or Multiple InGaN Quantum Wells