Shields Philip | Department Of Electronic And Electrical Engineering University Of Bath
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概要
関連著者
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Shields Philip
Department Of Electronic And Electrical Engineering University Of Bath
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Allsopp Duncan
Department of Electrical and Electronic Engineering, University of Bath, Bath BA2 7AL, U.K.
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Edwards Paul
Department Of Physics Supa University Of Strathclyde
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Martin Robert
Department Of Biological Sciences Murray State University
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Allsopp Duncan
Department Of Electronic And Electrical Engineering University Of Bath
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Jia Wei
Department Of Mechanical Engineering Yamagata University
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Taylor Robert
Department Of Mechanical Engineering Mississippi State University
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HOLMES Mark
Department of Economics, University of Waikato, New Zealand
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Reid Benjamin
Department of Physics, University of Oxford, Clarendon Laboratory, Oxford OX1 3PU, U.K.
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Chan Christopher
Department of Physics, University of Oxford, Clarendon Laboratory, Oxford OX1 3PU, U.K.
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Zhuang Yi
Department of Electronic and Electrical Engineering, University of Bath, Bath BA2 7AY, U.K.
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Lis Szymon
Department of Electronic and Electrical Engineering, University of Bath, Bath BA2 7AY, U.K.
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Bruckbauer Jochen
Department of Physics, SUPA, University of Strathclyde, Glasgow G4 0NG, U.K.
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Sarma Jayanta
Department of Electronic and Electrical Engineering, University of Bath, Bath BA2 7AY, U.K.
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Alexander-Webber Jack
Department of Physics, University of Oxford, Clarendon Laboratory, Oxford OX1 3PU, U.K.
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Nakazawa Shingo
Department of Physics, University of Oxford, Clarendon Laboratory, Oxford OX1 3PU, U.K.
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Zhuang YiDing
Department of Electronic and Electrical Engineering, University of Bath, Bath BA2 7AY, U.K.
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Lee Chien-ping
Department Of Electronic Engineering National Chiao Tung University
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Tsai Fu-yi
Department Of Electronics Engineering National Chiao Tung University
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LIU Chaowang
Department of Electronic and Electrical Engineering, University of Bath
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SATKA Alexander
International Laser Center and Slovak University of Technology
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JAGADAMMA Lethy
Department of Physics, SUPA, University of Strathclyde
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ALLSOPP Duncan
Department of Electronic and Electrical Engineering, University of Bath
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MARTIN Robert
Department of Physics, SUPA, University of Strathclyde
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KOVAC Jaroslav
International Laser Center and Slovak University of Technology
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UHEREK Frantisek
International Laser Center and Slovak University of Technology
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WANG Wang
Department of Electronic and Electrical Engineering, University of Bath
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TYAN Shing-Long
Department of Physics, National Cheng Kung University
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Shields Philip
Department Of Physics Clarendon Laboratory University Of Oxford
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Liu Chaowang
Department Of Electronic And Electrical Engineering University Of Bath
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Martin Robert
Department Of Physics Supa University Of Strathclyde
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Jagadamma Lethy
Department Of Physics Supa University Of Strathclyde
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NICHOLAS Robin
Department of Physics, Clarendon Laboratory, University of Oxford
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Nicholas Robin
Department Of Physics Clarendon Laboratory University Of Oxford
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Tyan Shing-long
Department Of Physics National Cheng Kung University
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Taylor Robert
Department of Physics, University of Oxford, Clarendon Laboratory, Oxford OX1 3PU, U.K.
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Edwards Paul
Department of Physics, SUPA, University of Strathclyde, Glasgow G4 0NG, U.K.
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O'Kane Simon
Department of Electronic and Electrical Engineering, University of Bath, Bath BA2 7AY, U.K.
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Allsopp Duncan
Department of Electronic and Electrical Engineering, University of Bath, Bath BA2 7AY, U.K.
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Krishnan Lethy
Department of Physics, SUPA, University of Strathclyde, 107 Rottenrow, Glasgow G4 0NG, U.K.
著作論文
- Light Emission from InGaN Quantum Wells Grown on the Facets of Closely Spaced GaN Nano-Pyramids Formed by Nano-Imprinting
- Magneto-Photoluminescence Study of InGaAs/GaAs Quantum Wells and Quantum Dots Grown on (111)B GaAs Substrate
- Photoluminescence of Single GaN/InGaN Nanorod Light Emitting Diode Fabricated on a Wafer Scale
- Optical Properties of GaN Nanorods Containing a Single or Multiple InGaN Quantum Wells
- Photoluminescence of Single GaN/InGaN Nanorod Light Emitting Diode Fabricated on a Wafer Scale
- Optical Properties of GaN Nanorods Containing a Single or Multiple InGaN Quantum Wells