Photoluminescence of Single GaN/InGaN Nanorod Light Emitting Diode Fabricated on a Wafer Scale
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概要
- 論文の詳細を見る
Nanorod arrays were fabricated on a blue InGaN/GaN single quantum well (QW) LED wafer using nanoimprint lithography. A regular hexagonal lattice of nanorods was made at a pitch of 2 μm producing single quantum disks in the nanorods with diameter of {\sim}400 nm. Time integrated micro-photoluminescence was performed to investigate the emission properties of top down processed single nanorods at 4.2 K. Micro-photoluminescence maps were made to study the spatial isolation of the photoluminescence emission, showing a good contrast ratio between nanorods. Excitation power dependent studies show screening of the quantum confined Stark effect for both the unprocessed wafer and the single nanorod. At low excitation powers, localised states appearing as sharp peaks in the photoluminescence spectrum were visible with a density of approximately four peaks per nanorod.
- 2013-08-25
著者
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Jia Wei
Department Of Mechanical Engineering Yamagata University
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Taylor Robert
Department Of Mechanical Engineering Mississippi State University
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Shields Philip
Department Of Electronic And Electrical Engineering University Of Bath
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HOLMES Mark
Department of Economics, University of Waikato, New Zealand
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Taylor Robert
Department of Physics, University of Oxford, Clarendon Laboratory, Oxford OX1 3PU, U.K.
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Reid Benjamin
Department of Physics, University of Oxford, Clarendon Laboratory, Oxford OX1 3PU, U.K.
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Chan Christopher
Department of Physics, University of Oxford, Clarendon Laboratory, Oxford OX1 3PU, U.K.
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Alexander-Webber Jack
Department of Physics, University of Oxford, Clarendon Laboratory, Oxford OX1 3PU, U.K.
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Nakazawa Shingo
Department of Physics, University of Oxford, Clarendon Laboratory, Oxford OX1 3PU, U.K.
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Zhuang YiDing
Department of Electronic and Electrical Engineering, University of Bath, Bath BA2 7AY, U.K.
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Allsopp Duncan
Department of Electrical and Electronic Engineering, University of Bath, Bath BA2 7AL, U.K.
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