Investigation of Strain-Relaxation Characteristics of Nitrides Grown on Si(110) by Metalorganic Chemical Vapor Deposition Using X-ray Diffraction
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概要
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This paper describes the effect of an interfacial biaxial stress field on the dislocation formation dynamics during epitaxial growth of nitrides on Si(110). The anisotropic mismatch stress between a 2-fold symmetry Si(110) atomic plane and the AlN basal plane of 6-fold symmetry may be relaxed through the creation of additional characteristic dislocations, as proposed by Ruiz-Zepeda et al. with Burgers vectors: \mbi{b}= 1/2[\bar{2}110] and \mbi{b}= [1\bar{2}10], \pm 60° from [11\bar{2}0]. The dislocations generated under such a biaxial stress field appear annihilating more efficiently with increasing thickness, leading to high-quality nitride epilayers on Si(110) for improved quantum efficiency of InGaN/GaN quantum wells.
- 2013-08-25
著者
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WANG Wang
Department of Electronic and Electrical Engineering, University of Bath
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Allsopp Duncan
Department Of Electronic And Electrical Engineering University Of Bath
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Jiang Quanzhong
Department of Electrical and Electronic Engineering, University of Bath, Bath BA2 7AL, U.K.
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Bowen Chris
Department of Electrical and Electronic Engineering, University of Bath, Bath BA2 7AL, U.K.
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Lewins Christopher
Department of Electrical and Electronic Engineering, University of Bath, Bath BA2 7AL, U.K.
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Allsopp Duncan
Department of Electrical and Electronic Engineering, University of Bath, Bath BA2 7AL, U.K.
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