Epitaxial Growth of High-Resistivity CdTe Thick Films Grown Using a Modified Close Space Sublimation Method

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概要

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• This paper reports the growth of high-resistivity CdTe thick epitaxial films of single crystal nature using a modified close space sublimation method (MCSS) in a Te-rich environment. We propose that the high Te2 partial pressure results in an increased concentration of TeCd antisites acting as deep donors to produce the high-resistivity CdTe, as well as improved quality of thick films. This is in agreement with the deep-donor model introduced by Fiderele et al. [Cryst. Res. Technol. 38 (2003) 588]. The thick films have a $\mu_{\text{e}}\tau_{\text{e}}$ value in the order $10^{-4}$ cm2 V-1 and as expected, the TeCd antisites appeared not to act as electron traps.

• 2010-02-25

著者

• Paul. J.

  Physics Department, University of Surrey, Guildford, GU2 5XH, U.K.

• Quanzhong Jiang

  Department of Physics, Durham University, Durham, DH1 3LE, U.K.

• Andy W.

  Department of Physics, Durham University, Durham, DH1 3LE, U.K.

• Jiang Quanzhong

  Department of Physics, Durham University, Durham, DH1 3LE, U.K.

• Brinkman Andy

  Department of Physics, Durham University, Durham, DH1 3LE, U.K.

• Veeramani Perumal

  Physics Department, University of Surrey, Guildford, GU2 5XH, U.K.

• Jiang Quanzhong

  Department of Electrical and Electronic Engineering, University of Bath, Bath BA2 7AL, U.K.

• Perumal Veeramani

  Physics Department, University of Surrey, Guildford, GU2 5XH, U.K.

関連論文

• Epitaxial Growth of High-Resistivity CdTe Thick Films Grown Using a Modified Close Space Sublimation Method
• Investigation of Strain-Relaxation Characteristics of Nitrides Grown on Si(110) by Metalorganic Chemical Vapor Deposition Using X-ray Diffraction

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