Nano-pendeo GaN Growth of Light Emitting Devices on Silicon
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概要
- 論文の詳細を見る
This paper presents the results using an alternative defects and strain minimizing technique with nanostructures as the compliant layer to grow III-V nitrides onto foreign substrates. Defects reduction and stress relaxation had been observed through HRTEM on GaN grown on sapphire and silicon. Results of LED devices on silicon with performance compatible with those on sapphire are presented.
- 社団法人照明学会の論文
著者
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WANG Wang
Department of Electronic and Electrical Engineering, University of Bath
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Shields P.
Department Of Electronic And Electrical Engineering University Of Bath
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Liu C.
Department Of Agricultural Chemistry Nation Taiwan University
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Cherns D.
H. H. Wills Physics Laboratory University Of Bristol
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GOTT A.
Department of Electronic and Electrical Engineering, University of Bath
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DENCHITCHAROEN S.
Department of Electronic and Electrical Engineering, University of Bath
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MESHI L.
H. H. Wills Physics Laboratory, University of Bristol
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KHONGPHETSAK S.
H. H. Wills Physics Laboratory, University of Bristol
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GRIFFITHS I.
H. H. Wills Physics Laboratory, University of Bristol
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CAMPION R.
Department of Physics, Nottingham University
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Gott A.
Department Of Electronic And Electrical Engineering University Of Bath
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Meshi L.
H. H. Wills Physics Laboratory University Of Bristol
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Khongphetsak S.
H. H. Wills Physics Laboratory University Of Bristol
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Denchitcharoen S.
Department Of Electronic And Electrical Engineering University Of Bath
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Campion R.
Department Of Physics Nottingham University
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Griffiths I.
H. H. Wills Physics Laboratory University Of Bristol
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