Profiling Ge islands in Si by large angle convergent beam electron diffraction

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概要

• 論文の詳細を見る
• Published for the Japanese Society of Electron Microscopy by Oxford University Pressの論文
• 1998-06-01

著者

• Jaeger W

  Univ. Kiel Kiel Due

• CHERNS D.

  H. H. Wills Physics Laboratory, University of Bristol

• HOVSEPIAN A.

  H. H. Wills Physics Laboratory, University of Bristol

• JAGER W.

  Center for Microanalysis, University of Kiel

• Cherns D

  Univ. Bristol Bristol Gbr

• Cherns D.

  H. H. Wills Physics Laboratory University Of Bristol

• Hovsepian A.

  H. H. Wills Physics Laboratory University Of Bristol

関連論文

• Profiling Ge islands in Si by large angle convergent beam electron diffraction
• Nano-pendeo GaN Growth of Light Emitting Devices on Silicon
• Amorphous GaN Grown by Room Temperature Molecular Beam Epitaxy
• Direct observation of piezoelectric fields in GaN/InGaN/GaN strained quantum wells

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