Amorphous GaN Grown by Room Temperature Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
Amorphous GaN films were grown at room temperature by molecular beam epitaxy on the oxide layer or GaAs(001)subtrates. Their properties were investigated by transmission electron microscopy/diffraction and micro-Raman spectroscopy.A broad Raman peak at 650 cm^<-1> identifies the amorphous GaN.The results suggest that the local short-range bonding structure in amorphous GaN is different from crystalline GaN supporting theoretical predictions [Stumm and Drabold:Phys.Rev.Lett.79(1997)677]that amorphous GaN is attractive fordevice applications.
- 社団法人応用物理学会の論文
- 2000-08-15
著者
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Lu Jun
Department Of Aquatic Biosciences Faculty Of Fisheries Tokyo University Of Fisheries
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KUBALL Martin
H.H.Wills Physics Laboratory, University of Bristol
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Kuball M
H.h.wills Physics Laboratory University Of Bristol
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Kuball Martin
H.h.wills Physics Laboratory University Of Bristol
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Cherns D
Univ. Bristol Bristol Gbr
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Lu Jun
Department Of Physics And Astronomy University Of Wales Cardiff
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MOKHTARI Hossein
H.H.Wills Physics Laboratory, University of Bristol
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CHERNS David
H.H.Wills Physics Laboratory, University of Bristol
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WESTWOOD David
Department of Physics and Astronomy, University of Wales Cardiff
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Westwood David
Department Of Physics And Astronomy University Of Wales Cardiff
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Mokhtari Hossein
H.h.wills Physics Laboratory University Of Bristol
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