Temperature Dependence of the Phonons of Bulk AIN

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概要

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• Micro-Raman scattering measurements were performed on bulk wurtzite AIN crystals over a temperature range from 10K to 1275 K. The temperature dependence of the frequency of the AIN phonons follows an empirical relationship previously introduced for diamond. A temperature-induced frequency shift of the E2 phonon of -(2.22±0.02)×10-2cm-1/K was determined for high temperatures, which is similar to values reported for bulk GaN. The results provide the basis for the non-invasive monitoring of the temperature of(Al, Ga)N by Raman scattering.

• 社団法人応用物理学会の論文
• 2000-07-15

著者

• Shi Ying

  Chemical Engineering Department Kansas State University

• M.HAYES Jonathan

  H.H.Wills Physics Laboratory, University of Bristol

• KUBALL Martin

  H.H.Wills Physics Laboratory, University of Bristol

• H.EDGAR James

  Chemical Engineering Department, kansas State University

• Kuball Martin

  H.h.wills Physics Laboratory University Of Bristol

• H.edgar James

  Chemical Engineering Department Kansas State University

• M.hayes Jonathan

  H.h.wills Physics Laboratory University Of Bristol

• Hayes Jonathan

  H.H.Wills Physics Laboratory, University of Bristol

関連論文

• Temperature Dependence of the Phonons of Bulk AIN
• Amorphous GaN Grown by Room Temperature Molecular Beam Epitaxy

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