ホール効果測定による半導体薄膜ガスセンサの動作機構に関する研究

概要

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Although Fe2O3-based thin-film gas sensors show considerable sensitivity to pollutant gases such as NOX or inflammable gases such as H2 and i-C4H10, the operation mechanism is not clear. In this study, the Hall effect of the sensing film is measured in an atmosphere containing NOX or an inflammable gas to clarify the sensing mechanism based on the change of the measured carrier density and Hall mobility in the presence of the gas. This study makes clear that the change of carrier concentration mainly determines the sensitivity while the change of Hall mobility does not contribute to the sensitivity. In addition the surface density of chemisorbed species is roughly estimated from the measurements. The Debye length is also estimated and discussed in relation with the sensing mechanism.
2010-03-01