半導体薄膜ガスセンサのガス選択性の改善法

概要

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In this study, three methods are experimentally examined to improve the gas selectivity of semiconductor thin-film gas sensors. They include (1) opposition of an alumina substrate, (2) deposition of a catalytic metal on the opposing substrate, and (3) application of a perpendicular electric field. The sensing film has a double layer structure; the lower layer is a thin-film composed of Fe2O3+TiO2 (5mol%) +MgO (4mol%) and the upper layer is a thin-film composed of WO3+TiO2 (10mol%). It is deposited on an alumina substrate. When the substrate and another alumina substrate are opposed in parallel at a close distance by inserting a couple of Au wires between them, the selectivity to reducing gases is improved. When a catalytic metal(Pt or Pd) is deposited on the opposing alumina substrate, the selectivity to i-C4H10 is enhanced. When a dc electric field is applied perpendicularly to the surface of the sensing film, the gas selectivity to reducing or oxidizing gases is controlled depending on the direction of the applied electric field.
社団法人電気学会の論文
2004-11-01