High Mobility Titanium-Doped In2O3 Thin Films Prepared by Sputtering/Post-Annealing Technique
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概要
- 論文の詳細を見る
High-electron-mobility Ti-doped In2O3 (ITiO) thin films were prepared on soda-lime glass substrates by rf magnetron sputtering followed by a post-annealing process. Both carrier concentration and electron mobility were considerably improved by annealing in a vacuum at 530 °C. A highest electron mobility of 105 cm2 V-1 s-1 with a resistivity of $1.95\times 10^{-4}$ $\Omega$ cm was obtained for an annealed ITiO thin film. The ITiO thin film exhibited an optical transmission of approximately 80% at wavelengths ranging from 400 to 1800 nm. Post-annealing in a vacuum is one of the effective methods for improving the electrical properties of ITiO thin films without sacrificing optical transmission.
- Japan Society of Applied Physicsの論文
- 2008-01-25
著者
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Nakada Tokio
Department Of Electrical Engineering And Electronics Aoyama Gakuin University
-
Hashimoto Ryota
Department Of Electrical Engineering And Electronics Aoyama Gakuin University
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Abe Yoshiyuki
Ichikawa Research Laboratory Sumitomo Metal Mining Co. Ltd.
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Nakada Tokio
Aoyama Gakuin Univ. Kanagawa Jpn
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Nakada Tokio
Department Of Dermatology Showa University School Of Medicine
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