Effects of Postdeposition Annealing on Electrical Properties of Mo-Doped Indium Oxide (IMO) Thin Films Deposited by RF Magnetron Cosputtering
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概要
- 論文の詳細を見る
High-electron-mobility Mo-doped In2O3 (IMO) thin films were prepared by rf magnetron cosputtering combined with postdepositon annealing. Both carrier concentration and electron mobility were considerably improved by annealing in vacuum at 550 °C. A minimum resistivity of $1.5\times 10^{-4}$ $\Omega$$\cdot$cm with an electron mobility of 94 cm2 V-1 s-1 was obtained for an annealed IMO thin film on a glass substrate. The IMO thin film exhibited an optical transmittance of over 70% at wavelengths ranging from 400 to 1800 nm. Postdeposition annealing is therefore one of the effective methods for improving the electrical properties of IMO thin films without sacrificing optical transmittance.
- 2006-11-25
著者
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Nakada Tokio
Department Of Dermatology Showa University School Of Medicine
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Ishizaki Hiroki
Department Of Electrical Engineering And Electronics Aoyama Gakuin University
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Tatejima Tsukasa
Department Of Electrical Engineering And Electronics Aoyama Gakuin University
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Yamada Naoomi
Department Of Applied Chemistry Chubu University
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Ishizaki Hiroki
Department of Electrical Engineering and Electronics, Aoyama Gakuin University, 5-10-1 Fuchinobe, Sagamihara, Kanagawa 229-8558, Japan
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Yamada Naoomi
Department of Electrical Engineering and Electronics, Aoyama Gakuin University, 5-10-1 Fuchinobe, Sagamihara, Kanagawa 229-8558, Japan
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Tatejima Tsukasa
Department of Electrical Engineering and Electronics, Aoyama Gakuin University, 5-10-1 Fuchinobe, Sagamihara, Kanagawa 229-8558, Japan
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